WAT-测试项目方法课件.ppt

1、WAT 测量项目以及测试方法测量项目以及测试方法2008/03/07WAT Introduction1.WAT是什么2.WAT系统介绍3.WAT测试项目及方法Wafer Acceptance Test（晶片允收测试）半导体硅片在完成所有制程工艺后，针对硅片上的各种测试结构所进行的电性测试。通过对WAT数据的分析，我们可以发现半导体制程工艺中的问题，帮助制程工艺进行调整。WATWAT是什么是什么?WAT系统介绍Manual ProberManual ProberAgilent Agilent 4284A CV 4284A CV MeterMeterAgilent Agilent 4156A 41

2、56A IV MeterIV MeterCascade Cascade Manual Manual ProberProberWAT系统介绍Agilent 4070 Agilent 4070 systemsystemTEL P8XLTEL P8XLAgilent 4070Agilent 4070WAT系统介绍HP 4070 ServerHP 4070 ServerAgilent 81110A Agilent 81110A Pulse Generator Pulse Generator Agilent 4284A Agilent 4284A CV MeterCV MeterAgilent E441

3、1B Agilent E4411B Spectrum AnalyzerSpectrum AnalyzerAgilent 4070 Agilent 4070 内部结构内部结构Agilent 3458AAgilent 3458ADigit Digit MultimeterMultimeterWaferAuto-ProberRelay MetricServerEDA ServerTest KeyProbe cardSMUPIN NoDataDataProduct informationTest ProgramControl commandDC testerCV Meter4070ServerWAT

4、流程图WAT测试项目1.1.MOS deviceMOS device2.2.Field DeviceField Device3.3.JunctionJunction4.4.Gate OxideGate Oxide5.5.ResistorResistor6.6.Bipolar DeviceBipolar Device7.7.Layout Rule CheckLayout Rule Check常见的几种器件结构常见的几种器件结构1.MOS DeviceItem nameMethod of measurementIdsVd=Vg=Vdd,Vs=Vb=0,measure Id,Ids=Id/Width

5、Vt0Vd=0.1V,Vs=Vb=0,sweep Vg from 0V to 3V,use maximum slope method,Vt0=Xintercept 1/2*VdVt1Vd=0.1V,Vs=Vb=0,sweep Vg from 0V to 2V,measureId,Vt1=VgId=0.1uA*Width/LengthIsubVd=Vdd,Vs=Vg=0,sweep Vg from 0 to Vdd to get maximum Isub currentIoffVd=1.1Vdd,Vg=Vs=Vb=0,measure Id,Ioff=Id/WidthBvdVg=Vs=Vb=0,s

6、weep Vd from 0V to Vdstop(3Vdd),measure Id,Bvd=VdId=0.1uA/um以以 NMOS NMOS 为例：为例：2.Field DeviceItem nameMethod of measurementVtVd=1.1Vdd,sweep Vg from 0V to Vgstop(3Vdd),measure Id,Vt=VgId=10nA/umIleakVg=Vd=1.1Vdd,measure Id,Ileak=Id/WidthVptVg=1.1Vdd,sweep Vd from 0V to Vdstop(3Vdd),measure Id,Vpt=Vd

7、Id=10nA/umWAT Item Name(以Poly Nfield为例):VtNfpS(field Vt)IleakNfpSVptNfpS(punchthrough Vt)THANK YOUSUCCESS2022-11-2614可编辑3.JunctionWAT Item Name(以N+/PW junction为例):CNjIleakNjBvNjItem nameMethod of measurementCjVg=0V,Vb=GND,apply a 0.03V AC signal to measure C value,Cj=C/AreaIleakVg=1.1Vdd,measure Ig,

8、Ileak=Ig/AreaBvVb=0,sweep Vg from 0V to Vgstop(3Vdd),measure Ig,Bv=VgIg=100pA/um24.Gate OxideWAT Item Name(以PW gate oxide为例):Cgpw ToxpwBvCgpwItem nameMethod of measurementCoxVg=Vdd,Vb=GND,apply a 0.03V AC signal to measure C value,Cox=C/AreaToxVg=GND,Vb=Vdd,apply a 0.03V AC signal to measure Cox val

9、ue,Tox=(o*ox*Area)/CoxBvVb=0,sweep Vg from 0V to Vgstop(3Vdd),measure Ig,Bv=VgIg=100pA/um2NOTE:If there has a dummy capacitor,Cdummy should be subtracted.(Cox=Cox-Cdummy)5.ResistorItem nameMethod of measurementRsVh=1V,measure Ih,Rs=(Vh/Ih)/SqrSheet resistance(RsN+/P+/NW/Poly/Metal)N+N+N+P W e l lP a

10、 dP a dM 1Contact Resistance(RcN+/P+/Via)Item nameMethod of measurementRcVh=1V,Vl=GND,measure Ih,Rs=(Vh/Ih)-(Rsn*Wn/Ln+Rsm*Wm/Lm)*1/2*Ncon)/NconNote:Rc need to subtract active&Metal resistor,RsMetal can be ignored due to metal resistor is very small.6.Bipolar DeviceS T IS T IS T IS T IN+P+P+N W e l

11、lM 1P a dP a dP a dP s u bBECWAT Item Name(以NPN为例):HfeNpn BvNpnItem nameMethod of measurementHfeIb=1uA,Vce=Vdd,Hfe=Ic/IbBvBase floating,Sweep Vce from 0V to Vcestop(3Vdd),measure Ic,Bv=VceIc=1uA7.Layout Rule CheckPADPADNW/N+Poly/N+active/Metal bridgeP WP WP WN WN WN WN WS T IWAT Item Name(以NW bridge为例):IbriNWItem nameMethod of measurementIbriVh=1.1Vdd,measure Ih,Ibri=IhTHANK YOUSUCCESS2022-11-2627可编辑