电力电子技术双语课件第2章.ppt

1、Power ElectronicsChapter 2 Power Electronic Devicesp=vi=0Off-stateCurrent through the device is 0i=0p=vi=0On-stateVoltage across the device is 0v=0O n-s ta te(c o n d u c tio n s ta te)tu rn in g-o ffO ff-s ta te(b lo c k in g s ta te)tu rn in g-o ntttv vi ip pControl circuitDetection(measurement)ci

2、rcuitdrivecircuitPower circuit(power stage,main circuit)Control circuit(in a broad sense)Power electronic system:Electric isolation:optical or magnetic Protection circuit is also very often used in power electronic system especially for the expensive power semiconductors.CEGA power electronic device

3、 must have at least two terminals allowing power circuit current flow through.A power electronic device usually has a third terminal control terminal to control the states of the device.Drive Circuithas only two terminals and can not be controlled by control signal.The on and off states of the devic

4、e are determined by the power circuit.is turned-on by a control signal and turned-off by the power circuitThe on and off states of the device are controlled by control signals.CathodeAnodeAnodeCathode-。-。-。-。-。-。-。-。-。-。-。-。-。-。-。+-+-+-+-+-p regionn regionDirection ofinner electric fieldSpace charge

5、 region(depletion region,potential barrier region)V+-npWoW+-250mBreakdown voltage dependent10 mpNd=10 cmn substrate-319Na=10 cm-319+n epiNd=10 cm-314pNd=10 cmn substrate-319+Na=10 cm-319+n epi-Nd=10 cm-314iAnodeCathode+-V-Avalanche breakdown Thermal breakdownIOIFUTOUFUa)IFUFtFt0trrtdtft1t2tURURPIRPd

6、iFdtdiRdtb)UFPuiiFuFtfrt02Vstandard recoveryReverse recovery time and charge specified.trr is usually less than 1s,for many less than 100 ns ultra-fast recovery diode.A majority carrier device Essentially no recovered charge,and lower forward voltage.Restricted to low reverse voltage and blocking ca

7、pability (less than 200V)KGA)(121CBO2CBO1G2AIIIIOUAkIAIHIG2IG1IG=0UboUDSMUDRMURRMURSMincreasing IG100%90%10%uAKttO0tdtrtrrtgrURRMIRMiAIOUIG=0KGAAGKGKAGT1T2AGKGGKN1P1N2N2P2b)a)GKARNPNPNPAGSKEGIGEAIKIc2Ic1IAV1V2Ot0t图1-14iGiAIA90%IA10%IAtttftstdtrt0t1t2t3t4t5t6becholeselectronsEbEcibic=ibie=(1+ibcut-of

8、f regionAmplifying(active)regionOIib3ib2ib1ib1ib2ib3UceSaturation region图 1-17ibIb1Ib2Icsic0090%Ib110%Ib190%Ics10%Icst0t1t2t3t4t5tttofftstftontrtdS O AOIcIcMPS BPcMUceUceMGSDP channelGSDN channelRsRGRFRLiDuGSupiD+UEEGCN+N-a)PN+N+PN+N+P+EmitterGateCollectorInjecting layerBuffer layerDrift regionJ3J2J

9、1GEC+-+-+-IDRNICVJ1IDRonDrift regionresistanceGCEOActive regionCut-off(forwardblocking)regionSaturation region(On region)Reverseblocking regionICURMUFMUCEUGE(th)UGEBand gapE E4E E3E E2E E1610/V cm2/cmV S CIntegrationof power electronic devicesSmart power integrated circuit(Smart power IC,SPIC,Smart

10、switch)High voltage integrated circuit(HVIC)Ordinary power module:just power devices packaged togetherIntegrated power electronics Module(IPEM):power devices,drive circuit,protection circuit,control circuitIntelligent power module(IPM):power devices,drive circuit,protection circuit(Lateral high-volt

11、age devices fabricated with conventional logic-level devices)(Vertical power devices onto which additional components are added without changing the vertical power devices process sequence)For a high power equipment,more than one module may be needed,in which case the modules are also called Power electronics building blocks(PEBB)thyristor,GTO,GTR