MOS工艺讲解-课件.ppt

1、MOS晶体管的动作晶体管的动作 MOS晶体管实质上是一种使晶体管实质上是一种使电流时而流过，时而切断的电流时而流过，时而切断的n+n+P型硅基板型硅基板栅极（金属）栅极（金属）绝缘层（绝缘层（SiO2）半半导导体体基基板板漏极漏极源极源极源极源极(S)漏极漏极(D)栅极栅极(G)1ppt课件silicon substratesourcedraintop oxidemetal connection to sourcemetal connection to gatemetal connection to drainpolysilicon gatedoped siliconfield oxidega

2、te oxide2ppt课件silicon substrate3ppt课件silicon substratefield oxide4ppt课件silicon substrate5ppt课件Shadow on photoresistExposed area of photoresistChrome platedglass maskUltraviolet Lightsilicon substrate6ppt课件非感光区域非感光区域silicon substrate感光区域感光区域7ppt课件Shadow on photoresistsilicon substratephotoresist8ppt课

3、件silicon substratesilicon substrate腐蚀腐蚀9ppt课件silicon substratesilicon substratefield oxide去胶去胶10ppt课件silicon substratethin oxide layer11ppt课件silicon substrategate oxide12ppt课件silicon substrategateultra-thin gate oxidepolysilicongate13ppt课件silicon substrategateScanning direction of ion beamimplanted

4、ions in active region of transistorsImplanted ions in photoresist to be removed during resist strip.sourcedrainion beam14ppt课件silicon substrategatesourcedraindoped silicon15ppt课件自自对对准工准工艺艺1.1.在有源区上覆盖一层薄氧化层在有源区上覆盖一层薄氧化层2.2.淀积多晶硅，用多晶硅栅极版图淀积多晶硅，用多晶硅栅极版图刻蚀多晶硅刻蚀多晶硅3.3.以多晶硅栅极图形为掩膜板，刻以多晶硅栅极图形为掩膜板，刻蚀氧化膜蚀氧化膜

5、4.4.离子注入离子注入16ppt课件silicon substratesourcedrain17ppt课件silicon substratecontact holesdrainsource18ppt课件silicon substratecontact holesdrainsource19ppt课件完整的完整的简单简单MOS晶体管晶体管结结构构silicon substratesourcedraintop oxidemetal connection to sourcemetal connection to gatemetal connection to drainpolysilicon gat

6、edoped siliconfield oxidegate oxide20ppt课件CMOSFETP型型 si subn+n+p+p+21ppt课件VDDP阱工艺阱工艺N阱工艺阱工艺双阱工艺双阱工艺P-P+P+N+N+P+N+VSSVOUTVINVDDN-P+P+N+N+P+N+VSSVOUTVINVDDP-P+P+N+N+P+N+VSSVOUTVINN-SiP-SiN-I-SiN+-Si22ppt课件 N-Si-衬底 P-well P-wellP-well N+N+P+P+N+P+N-SiP23ppt课件具体步骤如下：具体步骤如下：1生长二氧化硅（湿法氧化）：生长二氧化硅（湿法氧化）：S i

7、-衬底 S i O2Si(固体固体)+2H2O SiO2（固体）（固体）+2H224ppt课件25ppt课件2P阱光刻：阱光刻：光源光源26ppt课件27ppt课件P+P-well3P阱掺杂：阱掺杂：28ppt课件29ppt课件电流电流积分积分器器30ppt课件有源区有源区：nMOS、PMOS 晶体管形成的区域晶体管形成的区域P+N+N+P+N-SiP-wellP-wellP-well 淀积氮化硅淀积氮化硅 光刻有源区光刻有源区 场区氧化场区氧化 去除有源区氮化硅及二氧化硅去除有源区氮化硅及二氧化硅SiO2隔离岛隔离岛31ppt课件有源区depositednitride layer有源区光刻板

8、N型p型MOS制作区域(漏-栅-源)32ppt课件P-well1.淀积氮化硅：淀积氮化硅：氧化膜生长（湿法氧化）氧化膜生长（湿法氧化）P-well氮化膜生长氮化膜生长P-well涂胶涂胶P-well对版曝光对版曝光有源区光刻板有源区光刻板2.光刻有源区：光刻有源区：33ppt课件P-well显影显影P-well氮化硅刻蚀去胶氮化硅刻蚀去胶3.场区氧化：场区氧化：P-well场区氧化（湿法氧化）场区氧化（湿法氧化）P-well去除氮化硅薄膜及有源区去除氮化硅薄膜及有源区SiO234ppt课件P-well去除氮化硅薄膜及有源区去除氮化硅薄膜及有源区SiO2P-wellP+N+N+P+N-SiP-w

9、ell栅极氧化膜栅极氧化膜多晶硅栅极多晶硅栅极 生长栅极氧化膜生长栅极氧化膜 淀积多晶硅淀积多晶硅 光刻多晶硅光刻多晶硅35ppt课件P-well生长栅极氧化膜生长栅极氧化膜P-well淀积多晶硅淀积多晶硅P-well涂胶光刻涂胶光刻多晶硅光刻板多晶硅光刻板P-well多晶硅刻蚀多晶硅刻蚀36ppt课件掩膜4 ：P+区光刻区光刻 1、P+区光刻区光刻 2、离子注入、离子注入B+，栅区有多晶硅做掩蔽，栅区有多晶硅做掩蔽，称为硅栅自对准工艺。称为硅栅自对准工艺。3、去胶、去胶P-wellP+N+N+P+N-SiP-wellP-wellP+P+37ppt课件P-wellP+P-wellP+P+硼离子

10、注入硼离子注入去胶去胶38ppt课件掩膜5 ：N+区光刻区光刻 1、N+区光刻区光刻 2、离子注入、离子注入P+，栅区有多晶硅做掩蔽，栅区有多晶硅做掩蔽，称为硅栅自对准工艺。称为硅栅自对准工艺。3、去胶、去胶P-wellP+N+N+P+N-SiP-wellP-wellP+P+N+N+39ppt课件P-wellN+P-wellP+P+磷离子注入磷离子注入去胶去胶P+P+N+N+40ppt课件掩膜6 ：光刻接触孔：光刻接触孔1、淀积、淀积PSG.2、光刻接触孔、光刻接触孔3、刻蚀接触孔、刻蚀接触孔P-wellP+N+N+P+N-SiP-wellP-wellP+P+N+N+磷硅玻璃（磷硅玻璃（PSG

11、)41ppt课件掩膜6 ：光刻接触孔：光刻接触孔P-wellP+P+N+N+淀积PSGP-wellP+P+N+N+光刻接触孔P-wellP+P+N+N+刻蚀接触孔P-wellP+P+N+N+去胶42ppt课件43ppt课件掩膜7 ：光刻铝线：光刻铝线1、淀积铝、淀积铝.2、光刻铝、光刻铝3、去胶、去胶P-wellP-wellP+P+N+N+44ppt课件P-wellP+P+N+N+铝线铝线PSG场氧场氧栅极氧化膜栅极氧化膜P+区区P-wellN-型硅极板型硅极板多晶硅多晶硅N+区区45ppt课件Example:Intel 0.25 micron Process5 metal layersTi/Al-Cu/Ti/TiNPolysilicon dielectric46ppt课件Interconnect Impact on Chip47ppt课件掩膜8：刻钝化孔：刻钝化孔CircuitPADCHIP48ppt课件