电力电子技术Chapter0课件2.ppt

1、p=vi=0Off-stateCurrent through the device is 0i=0p=vi=0On-stateVoltage across the device is 0v=0O n-s ta te(c o n d u c tio n s ta te)tu rn in g-o ffO ff-s ta te(b lo c k in g s ta te)tu rn in g-o ntttv vi ip pControl circuitDetection(measurement)circuitdrivecircuitPower circuit(power stage,main cir

2、cuit)Control circuit(in a broad sense)Power electronic system:Electric isolation:optical or magnetic Protection circuit is also very often used in power electronic system especially for the expensive power semiconductors.CEGA power electronic device must have at least two terminals allowing power ci

3、rcuit current flow through.A power electronic device usually has a third terminal control terminal to control the states of the device.Drive Circuithas only two terminals and can not be controlled by control signal.The on and off states of the device are determined by the power circuit.is turned-on

4、by a control signal and turned-off by the power circuitThe on and off states of the device are controlled by control signals.CathodeAnodeAnodeCathode-。-。-。-。-。-。-。-。-。-。-。-。-。-。-。+-+-+-+-+-p regionn regionDirection ofinner electric fieldSpace charge region(depletion region,potential barrier region)V

5、+-npWoW+-Larger size Vertically oriented structure n drift region(p-i-n diode)Conductivity modulation250mBreakdown voltage dependent10 mpNd=10 cmn substrate-319Na=10 cm-319+n epiNd=10 cm-314pNd=10 cmn substrate-319+Na=10 cm-319+n epi-Nd=10 cm-314iAnodeCathode+-V-Avalanche breakdown Thermal breakdown

6、IOIFUTOUFUReverse-recovery time,reverse-recovery charge,reverse-recovery peak current.a)IFUFtFt0trrtdtft1t2tURURPIRPdiFdtdiRdtforward-recovery timeb)UFPuiiFuFtfrt02Vstandard recoveryReverse recovery time and charge specified.trr is usually less than 1s,for many less than 100 ns ultra-fast recovery d

7、iode.A majority carrier device Essentially no recovered charge,and lower forward voltage.Restricted to low reverse voltage and blocking capability (less than 200V)KGA)(121CBO2CBO1G2AIIIIOUAkIAIHIG2IG1IG=0UboUDSMUDRMURRMURSMincreasing IG100%90%10%uAKttO0tdtrtrrtgrURRMIRMiAIOUIG=0KGAAGKGKAGT1T2AGKGGKN

8、1P1N2N2P2b)a)GKARNPNPNPAGSKEGIGEAIKIc2Ic1IAV1V2Ot0t图1-14iGiAIA90%IA10%IAtttftstdtrt0t1t2t3t4t5t6becholeselectronsEbEcibic=ibie=(1+ibcut-off regionAmplifying(active)regionOIib3ib2ib1ib1ib2ib3UceSaturation region图1-17ibIb1Ib2Icsic0090%Ib110%Ib190%Ics10%Icst0t1t2t3t4t5tttofftstftontrtdS O AOIcIcMPS BPc

9、MUceUceMGSDP channelGSDN channelp-n-junction is reverse-biasedoff-state voltage appears across n-regionRsRGRFRLiDuGSupiD+UEEGCN+N-a)PN+N+PN+N+P+EmitterGateCollectorInjecting layerBuffer layerDrift regionJ3J2J1GEC+-+-+-IDRNICVJ1IDRonDrift regionresistanceGCEOActive regionCut-off(forwardblocking)regio

10、nSaturation region(On region)Reverseblocking regionICURMUFMUCEUGE(th)UGEIGBT turn-on is similar to power MOSFET turn-onThe major difference between IGBT turn-off and power MOSFET turn-off:There is current tailing in the IGBT turn-off due to the stored charge in the drift region.Band gapE E4E E3E E2E

11、 E1610/V cm2/cmV S CPhysical Properties of Silicon CarbideWafer ProductionInfineon SiC overviewUnipolar devicesExisting products:Diode based:300V 1200V(1700V can be realized on demand)Under development:JFET based:600V 1500V(discrete,cascodes in modules)Expansion to higher voltage classes(single chip

12、/super-cascode)possibleBipolar devicesNo development activities at IFXSolid volume forecasts and cost targets requiredIntegrationof power electronic devicesSmart power integrated circuit(Smart power IC,SPIC,Smart switch)High voltage integrated circuit(HVIC)Ordinary power module:just power devices pa

13、ckaged togetherIntegrated power electronics Module(IPEM):power devices,drive circuit,protection circuit,control circuitIntelligent power module(IPM):power devices,drive circuit,protection circuit(Lateral high-voltage devices fabricated with conventional logic-level devices)(Vertical power devices on

14、to which additional components are added without changing the vertical power devices process sequence)For a high power equipment,more than one module may be needed,in which case the modules are also called Power electronics building blocks(PEBB)thyristor,GTO,GTR Donor and acceptor space charges cancel each other out!Package contribution to Rds(on)for Best-in-Class LV MOSFET devicesPackage development