DRAM内存颗粒测试简介PPT课件.pptx
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- 关 键 词:
- DRAM 内存 颗粒 测试 简介 PPT 课件
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1、Introduction to DRAM Testing- DRAM inside team- 2015.MayAgendanBasis of TestingnTypical DRAM Testing FlownBurn-innDC Test (Open/Short, Leakage, IDD)nFunctional Test & Test PatternnSpeed TestDRAM ManufactureWaferAssemblyFinal TestingFinal ProductWhy Testing?To screen out defectWafer defectAssembly de
2、fectMake sure product meet spec of customerVoltage guard bandTemperature guard bandTiming guard bandComplex test patternCollect data for design & process improvementQualityReliabilityCostEfficiencyIC Test MethodologyIC TesterPPSDriverComparatorDUT* DUT = Device Under TestPower SupplyOutputInputTesti
3、ng of a DUT: 1. To connect PPS, Driver, Comparator & GND. 2. To apply power to DUT. 3. To input data to DUT (Address, Control Command, Data) 4. To compare output with “expect value” and judge PASS/FAILBasic Test SignalDigital Waveform ElementsLogicVoltageTimingTypical DRAM Final Test FlowBurn-in MBT
4、 (Monitor Burn in Test): Stress to screen out Early Failures TBT (Test Burn in Test): Long time pattern test Very Low Speed(5-20MHz), High Parallel Test (10-20Kpcs/oven), Low CostCore Test DC Test Functional Test Low Speed (DDR3 667MHz), Typical tester Advantest T5588 + 512DUT HiFixSpeed Test Speed
5、& AC Timing Test Full Speed (DDR3 1600MHz and above), Advantest T5503 + 256DUT HiFixBackend Marking Ball Scan Visual Inspection Baking Vacuum Pack DRAM Burn-in (MBT)High Temperature Stress (125degC)High Voltage StressStressful Pattern BIOperation TimeFailure RateInfant MortalityNormal LifeWorn outNe
6、w productMature productBath CurveDRAM Burn-in (TBT)Multiple temperature tested (e.g. 88C, 25C, -10C)Long test time at low speedPatterns cover all cell arraysNo Stressful conditionHigh parallel test count, low costBoth MBT and TBT does NOT test DC (Ando Oven)DRAM Advantest TestOpen/Short testLeakage
7、testIDD testDifferent parameter & Pattern for each functionTo check DRAM can operate functionallyTiming test different speed gradeDC Test VCCVCCDC Test Open ShortPurpose: Check connection between pins and test fixture Check if pin to pin is short in IC package Check if pin to wafer pad has open in I
8、C package Check if protection diodes work on die It is a quick electrical check to determine if it is safe to apply power Also called Continuity TestDC Test Open ShortFailure Mode:a) Wafer ProblemDefect of diodeb) Assembly ProblemWire bondingSolder ballc) Contact ProblemSocket issueCore CircuitDefec
9、tive diodeSocket Pogo Pin defectWire touchedDC Test Open ShortO/S Test Condition:ProcedureGround all pins ( including VDD)Using PMU force 100 uA, one pin at a timeMeasure voltageFail open test if the voltage is greater than 1.5 VFail short test if the voltage is less than 0.2 V100uA0.65 VPMUforcesen
10、seforceMeasureVss=0Vdd=0100uAFail OpenPassFail Short 1.5V 0.2 V1.5 V-100uA-0.65 VPMUforcesenseforceMeasureVss=0Vdd=0-100uAISVMOther=0Typical -0.65VDC Test LeakagePurpose: Verify resistance of pin to VDD/VSS is high enough Verify resistance of pin to pins is high enough Identify process problem in CM
11、OS device DC Test LeakageILIH/ILIL: Input Leakage High/Low To verify input buffers offer a high resistance No preconditioning pattern appliedILOH/ILOL: Output Leakage High/Low To verify tri-state output buffers offer a high resistance in off state Test requires preconditioning pattern Performed only
12、 on three-state outputs and bi-directional pinsDC Test LeakageFailure Mode:a) Wafer problemb) Assembly problemc) Socket Contact problem (short)Die crackBall touch (Short)DC Test Input Leakage LowProcedureApply VDDmax (2.0V)Pre-condition all input pins to logic 1 (high voltage)Using PMU (Parametric M
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